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| GaAs MMIC CGY 40 ________________________________________________________________________________________________________ Datasheet * Single-stage monolithic microwave IC ( MMICamplifier ) * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz * Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V * Individual current control with neg. gate bias * Hermetically sealed ceramic stripline package Cerec-X ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Circuit Diagram (Pin Configuration) Package 1) CGY 40 40 Q68000-A4444 Cerec-X Maximum ratings Drain-voltage Current control gate voltage Drain-gate voltage Input power Channel temperature Storage temperature range Total power dissipation (TS < 82C) 2) Thermal resistance Channel-soldering point 2) Symbol Value 5.5 -3 ... 0 8.5 16 150 -55...+150 440 Unit V V V dBm C C mW VD VG VDG PIN TCh Tstg Ptot RthChS 155 K/W Note: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed RF performance, stable operating conditions and adequate cooling. 1) Dimensions see chapter Package Outlines 2) Ts is measured on the source lead at the soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/5 11.01.1996 HL EH PD 21 GaAs MMIC Electrical Characteristics TA = 25 C, VG = 0 V, VD = 4.5 V, CGY 40 ________________________________________________________________________________________________________ RS = RL = 50 , unless otherwise specified ( for application circuit see next page ) Characteristics Drain current Power gain f = 200 MHz f = 1800 MHz Symbol min - typ 60 max 80 Unit mA dB ID G 9.5 8 G - 10.5 9 0.4 1.1 2.5 2.8 12 10.5 dB 2 dB 4.0 dB Gain flatness f = 200 to 1000 MHz f = 800 to 1800 MHz Noise figure f = 200 to 1000 MHz f = 800 to 1800 MHz F - Input return loss f = 200 to 1000 MHz f = 800 to 1800 MHz RLIN 13 12 12 12 9.5 Output return loss f = 200 to 1000 MHz f = 800 to 1800 MHz RLOUT 9.5 dB Third order intercept point Two tone intermodulation test f1 = 806 MHz, f2 = 810 MHz P = 10 dBm ( both carriers ) 0 IP3 31 32 - dBm 1dB gain compression f = 200 to 1800 MHz P1 dB G 30 20 18 - dBm Gain control dynamic range f = 200 to 1000 MHz f = 800 to 1800 MHz dB Siemens Aktiengesellschaft pg. 2/5 11.01.1996 HL EH PD 21 GaAs MMIC Application Circuit ( f = 800 to 1800 MHz ) CGY 40 ________________________________________________________________________________________________________ V V G C 3 L Input 50Ohm C1 L 2 2 3 D D L 3 C 1 4 2 C 4 Output 50Ohm CGY40 1 50 Ohm Microstripline Legend of components C1 , C2 C3 , C4 L1 L 2 , L3 D Chip capacitors 100 pF Chip capacitors 1 nF For optimized input matching - discrete inductor: approx. 3nH, or - printed microstripline inductor: Z approx. 100 , le approx. 5 mm - discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper wire on nylon rod with M3-thread, or - printed microstripline inductor Z diode 5.6 V ( type BZW 22 C5 V 6 ) Siemens Aktiengesellschaft pg. 3/5 11.01.1996 HL EH PD 21 GaAs MMIC CGY 40 ________________________________________________________________________________________________________ Total Power Dissipation Ptot = f (TS;TA) 500 P tot [ mW ] 400 300 TS TA 200 100 0 0 150 50 100 TA ; TS [ C ] Siemens Aktiengesellschaft pg. 4/5 11.01.1996 HL EH PD 21 GaAs MMIC CGY 40 ________________________________________________________________________________________________________ Typical Common Source S-Parameters VG = 0V f GHz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 Mag 0.20 0.16 0.15 0.16 0.15 0.14 0.15 0.15 0.16 0.17 0.18 0.21 0.21 0.23 0.24 0.26 0.29 0.31 0.32 0.34 0.36 S11 Ang -47 -49 -60 -72 -87 -105 -124 -139 -151 -166 -176 173 163 154 146 140 136 127 123 118 115 Mag 3.32 3.24 3.17 3.09 3.02 2.95 2.88 2.82 2.75 2.69 2.62 2.56 2.48 2.40 2.32 2.24 2.15 2.05 1.94 1.83 1.80 VD = 4.5 V S21 Ang 165 158 149 141 132 124 116 107 100 93 86 80 73 67 61 55 51 44 39 34 29 Mag 0.14 0.14 0.14 0.14 0.13 0.13 0.13 0.12 0.12 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 Z0 = 50 S12 Ang 2 -2 -6 -8 -10 -12 -13 -14 -15 -15 -15 -14 -14 -14 -13 -12 -14 -12 -11 -11 -11 Mag 0.09 0.09 0.11 0.13 0.16 0.19 0.21 0.22 0.24 0.25 0.26 0.27 0.27 0.27 0.27 0.27 0.26 0.25 0.24 0.23 0.22 S22 Ang -150 148 117 97 84 76 68 60 54 48 41 37 32 28 24 20 18 17 14 10 6 Siemens Aktiengesellschaft pg. 5/5 11.01.1996 HL EH PD 21 |
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